TRS8E65C,S1Q Pricing (USD) [12497PC Stock]
- 1 pcs$4.22191
- Nimewo Pati:
- TRS8E65C,S1Q
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- DIODE SCHOTTKY 650V 8A TO220-2L.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TRS8E65C,S1Q electronic components. TRS8E65C,S1Q can be shipped within 24 hours after order. If you have any demands for TRS8E65C,S1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TRS8E65C,S1Q Atribi pwodwi yo
Nimewo Pati :
TRS8E65C,S1Q
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
DIODE SCHOTTKY 650V 8A TO220-2L
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) :
8A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.7V @ 8A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
90µA @ 650V
Kapasite @ Vr, F :
44pF @ 650V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-2
Pake Aparèy Founisè :
TO-220-2L
Operating Tanperati - Junction :
175°C (Max)
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