Manifakti :
Global Power Technologies Group
Deskripsyon :
DIODE SCHOTTKY 600V 3A TO252-2
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
3A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.7V @ 3A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
100µA @ 600V
Kapasite @ Vr, F :
122pF @ 1V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
TO-252-2
Operating Tanperati - Junction :
-55°C ~ 135°C