S1GHE3_A/H Pricing (USD) [977949PC Stock]
- 1 pcs$0.03782
- 7,200 pcs$0.02825
- Nimewo Pati:
- S1GHE3_A/H
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 400V 1A DO214AC. Rectifiers 1.0 Amp 400 Volt 40A IFSM @ 8.3ms
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division S1GHE3_A/H electronic components. S1GHE3_A/H can be shipped within 24 hours after order. If you have any demands for S1GHE3_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
S1GHE3_A/H Atribi pwodwi yo
Nimewo Pati :
S1GHE3_A/H
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 400V 1A DO214AC
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
400V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 1A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
1.8µs
Kouran - Fèy Reverse @ Vr :
1µA @ 400V
Kapasite @ Vr, F :
12pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AC, SMA
Pake Aparèy Founisè :
DO-214AC (SMA)
Operating Tanperati - Junction :
-55°C ~ 150°C
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