Toshiba Semiconductor and Storage - 1SS387,L3F

KEY Part #: K6456629

1SS387,L3F Pricing (USD) [2750629PC Stock]

  • 1 pcs$0.01419
  • 8,000 pcs$0.01412
  • 16,000 pcs$0.01200
  • 24,000 pcs$0.01130
  • 56,000 pcs$0.01059
  • 200,000 pcs$0.00941

Nimewo Pati:
1SS387,L3F
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
DIODE GEN PURP 80V 100MA ESC. Diodes - General Purpose, Power, Switching Switching Diode
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Tiristors - SCR and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage 1SS387,L3F electronic components. 1SS387,L3F can be shipped within 24 hours after order. If you have any demands for 1SS387,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS387,L3F Atribi pwodwi yo

Nimewo Pati : 1SS387,L3F
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : DIODE GEN PURP 80V 100MA ESC
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 80V
Kouran - Mwayèn Rèktifye (Io) : 100mA
Voltage - Forward (Vf) (Max) @ Si : 1.2V @ 100mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : 4ns
Kouran - Fèy Reverse @ Vr : 500nA @ 80V
Kapasite @ Vr, F : 3pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SC-79, SOD-523
Pake Aparèy Founisè : ESC
Operating Tanperati - Junction : 125°C (Max)

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