Infineon Technologies - FS300R12OE4PNOSA1

KEY Part #: K6532693

FS300R12OE4PNOSA1 Pricing (USD) [230PC Stock]

  • 1 pcs$201.75754

Nimewo Pati:
FS300R12OE4PNOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOD IGBT MED PWR ECONOPP-2.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Transistors - Pwogramasyon Unijunction and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Infineon Technologies FS300R12OE4PNOSA1 electronic components. FS300R12OE4PNOSA1 can be shipped within 24 hours after order. If you have any demands for FS300R12OE4PNOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FS300R12OE4PNOSA1 Atribi pwodwi yo

Nimewo Pati : FS300R12OE4PNOSA1
Manifakti : Infineon Technologies
Deskripsyon : MOD IGBT MED PWR ECONOPP-2
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Full Bridge
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 600A
Pouvwa - Max : 20mW
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 300A
Kouran - Cutoff Pèseptè (Max) : 3mA
Antre kapasite (Cies) @ Vce : 18.5nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module

Ou ka enterese tou
  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • CPV362M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 31 IMS-2.

  • CPV362M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 3.9A IMS-2.

  • CPV363M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6.8A IMS-2.

  • A2C25S12M3-F

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.

  • A2C35S12M3-F

    STMicroelectronics

    IGBT TRENCH 1200V 35A ACEPACK2.