Vishay Semiconductor Diodes Division - VI20120S-E3/4W

KEY Part #: K6427456

VI20120S-E3/4W Pricing (USD) [134373PC Stock]

  • 1 pcs$0.27526
  • 1,000 pcs$0.25060

Nimewo Pati:
VI20120S-E3/4W
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 120V 20A TO262AA. Schottky Diodes & Rectifiers 20 Amp 120 Volt
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VI20120S-E3/4W electronic components. VI20120S-E3/4W can be shipped within 24 hours after order. If you have any demands for VI20120S-E3/4W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VI20120S-E3/4W Atribi pwodwi yo

Nimewo Pati : VI20120S-E3/4W
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 120V 20A TO262AA
Seri : TMBS®
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 120V
Kouran - Mwayèn Rèktifye (Io) : 20A
Voltage - Forward (Vf) (Max) @ Si : 1.12V @ 20A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 300µA @ 120V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA
Pake Aparèy Founisè : TO-262AA
Operating Tanperati - Junction : -40°C ~ 150°C

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