NS8JTHE3_A/P Pricing (USD) [3177PC Stock]
- 1,000 pcs$0.26162
- Nimewo Pati:
- NS8JTHE3_A/P
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 600V 8A TO220AC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division NS8JTHE3_A/P electronic components. NS8JTHE3_A/P can be shipped within 24 hours after order. If you have any demands for NS8JTHE3_A/P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NS8JTHE3_A/P Atribi pwodwi yo
Nimewo Pati :
NS8JTHE3_A/P
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 600V 8A TO220AC
Seri :
Automotive, AEC-Q101
Estati Pati :
Obsolete
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 8A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Kapasite @ Vr, F :
55pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-2
Pake Aparèy Founisè :
TO-220AC
Operating Tanperati - Junction :
-55°C ~ 150°C
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