Vishay Semiconductor Diodes Division - SGL41-30HE3/97

KEY Part #: K6435818

SGL41-30HE3/97 Pricing (USD) [356148PC Stock]

  • 1 pcs$0.10385
  • 5,000 pcs$0.09032

Nimewo Pati:
SGL41-30HE3/97
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 30V 1A DO213AB. Schottky Diodes & Rectifiers 30 Volt 1.0 Amp 30 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division SGL41-30HE3/97 electronic components. SGL41-30HE3/97 can be shipped within 24 hours after order. If you have any demands for SGL41-30HE3/97, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SGL41-30HE3/97 Atribi pwodwi yo

Nimewo Pati : SGL41-30HE3/97
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 30V 1A DO213AB
Seri : -
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 30V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 500mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 500µA @ 30V
Kapasite @ Vr, F : 110pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-213AB, MELF
Pake Aparèy Founisè : GL41 (DO-213AB)
Operating Tanperati - Junction : -55°C ~ 125°C

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