Vishay Semiconductor Diodes Division - FESB16GTHE3/81

KEY Part #: K6456058

FESB16GTHE3/81 Pricing (USD) [68452PC Stock]

  • 1 pcs$0.57121
  • 800 pcs$0.53010

Nimewo Pati:
FESB16GTHE3/81
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 400V 16A TO263AB. Rectifiers 16 Amp 400 Volt 50ns 250 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division FESB16GTHE3/81 electronic components. FESB16GTHE3/81 can be shipped within 24 hours after order. If you have any demands for FESB16GTHE3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FESB16GTHE3/81 Atribi pwodwi yo

Nimewo Pati : FESB16GTHE3/81
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 400V 16A TO263AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 16A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 16A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 10µA @ 400V
Kapasite @ Vr, F : 175pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB
Operating Tanperati - Junction : -65°C ~ 150°C

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