Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 200V 500MA DO35
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
500mA
Voltage - Forward (Vf) (Max) @ Si :
1V @ 100mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
100nA @ 75V
Kapasite @ Vr, F :
5pF @ 0V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-204AH, DO-35, Axial
Pake Aparèy Founisè :
DO-35
Operating Tanperati - Junction :
175°C (Max)