[12852PC Stock]
- Nimewo Pati:
- IRFDC20
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 600V 320MA 4-DIP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFDC20 electronic components. IRFDC20 can be shipped within 24 hours after order. If you have any demands for IRFDC20, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFDC20 Atribi pwodwi yo
Nimewo Pati :
IRFDC20
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 600V 320MA 4-DIP
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
320mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
4.4 Ohm @ 190mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
350pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
4-DIP, Hexdip, HVMDIP
Pake / Ka :
4-DIP (0.300", 7.62mm)
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