Taiwan Semiconductor Corporation - ESH1DM RSG

KEY Part #: K6456179

ESH1DM RSG Pricing (USD) [906918PC Stock]

  • 1 pcs$0.04078

Nimewo Pati:
ESH1DM RSG
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE GEN PURP 200V 1A MICRO SMA. Rectifiers 1A 200V Micro SMA
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Taiwan Semiconductor Corporation ESH1DM RSG electronic components. ESH1DM RSG can be shipped within 24 hours after order. If you have any demands for ESH1DM RSG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH1DM RSG Atribi pwodwi yo

Nimewo Pati : ESH1DM RSG
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 200V 1A MICRO SMA
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.5V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 25ns
Kouran - Fèy Reverse @ Vr : 1µA @ 200V
Kapasite @ Vr, F : 3pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : 2-SMD, Flat Lead
Pake Aparèy Founisè : Micro SMA
Operating Tanperati - Junction : -55°C ~ 150°C

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