Renesas Electronics America Inc. - ISL6612AEIBZ-T

KEY Part #: K1221833

[6282PC Stock]


    Nimewo Pati:
    ISL6612AEIBZ-T
    Manifakti:
    Renesas Electronics America Inc.
    Detaye deskripsyon:
    IC MOSFET DRVR SYNC BUCK 8EPSOIC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Entèfas - UARTs (Transmetè Inivèsèl Reseptè Asenkr, Akizisyon Done - Analog pou Digital Convertisseurs, Revèy / Distribisyon - Minis pwogramasyon ak osila, Entèfas - Modil yo, Embedded - Microcontroleurs, Lojik - Flip Flops, Memwa - regulateur and PMIC - PFC (Koreksyon faktè pouvwa) ...
    Avantaj konpetitif:
    We specialize in Renesas Electronics America Inc. ISL6612AEIBZ-T electronic components. ISL6612AEIBZ-T can be shipped within 24 hours after order. If you have any demands for ISL6612AEIBZ-T, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ISL6612AEIBZ-T Atribi pwodwi yo

    Nimewo Pati : ISL6612AEIBZ-T
    Manifakti : Renesas Electronics America Inc.
    Deskripsyon : IC MOSFET DRVR SYNC BUCK 8EPSOIC
    Seri : -
    Estati Pati : Obsolete
    Kondwi konte genyen : Half-Bridge
    Kalite Chèn : Synchronous
    Kantite Chofè yo : 2
    Kalite Gate : N-Channel MOSFET
    Voltage - Pwovizyon pou : 10.8V ~ 13.2V
    Vòltaj lojik - VIL, VIH : -
    Kouran - Peak Sòti (Sous, Lavabo) : 1.25A, 2A
    Kalite Antre : Non-Inverting
    Segondè Voltage Side - Max (Bootstrap) : 36V
    Rise / Fall Time (Tip) : 26ns, 18ns
    Operating Tanperati : -40°C ~ 125°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width) Exposed Pad
    Pake Aparèy Founisè : 8-SOIC-EP
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