Vishay Semiconductor Diodes Division - VS-8EWS10STRR-M3

KEY Part #: K6434346

VS-8EWS10STRR-M3 Pricing (USD) [191249PC Stock]

  • 1 pcs$0.19340
  • 3,000 pcs$0.17442

Nimewo Pati:
VS-8EWS10STRR-M3
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 1KV 8A DPAK. Rectifiers Input Diodes - D-PAK
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Transistors - JFETs, Diodes - RF, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-8EWS10STRR-M3 electronic components. VS-8EWS10STRR-M3 can be shipped within 24 hours after order. If you have any demands for VS-8EWS10STRR-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-8EWS10STRR-M3 Atribi pwodwi yo

Nimewo Pati : VS-8EWS10STRR-M3
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1KV 8A DPAK
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1000V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 8A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 50µA @ 1000V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : D-PAK (TO-252AA)
Operating Tanperati - Junction : -55°C ~ 150°C

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