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- Nimewo Pati:
- BUK9C1R3-40EJ
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 40V D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. BUK9C1R3-40EJ electronic components. BUK9C1R3-40EJ can be shipped within 24 hours after order. If you have any demands for BUK9C1R3-40EJ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUK9C1R3-40EJ Atribi pwodwi yo
Nimewo Pati :
BUK9C1R3-40EJ
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 40V D2PAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
190A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
1.3 mOhm @ 90A, 5V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK-7
Pake / Ka :
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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