BYG10D-E3/TR Pricing (USD) [739474PC Stock]
- 1 pcs$0.05002
- 1,800 pcs$0.04701
- 3,600 pcs$0.04231
- 5,400 pcs$0.03996
- 12,600 pcs$0.03643
- 45,000 pcs$0.03408
- Nimewo Pati:
- BYG10D-E3/TR
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE AVALANCHE 200V 1.5A. Rectifiers 1.5 Amp 200 Volt
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division BYG10D-E3/TR electronic components. BYG10D-E3/TR can be shipped within 24 hours after order. If you have any demands for BYG10D-E3/TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BYG10D-E3/TR Atribi pwodwi yo
Nimewo Pati :
BYG10D-E3/TR
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE AVALANCHE 200V 1.5A
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Avalanche
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
1.5A
Voltage - Forward (Vf) (Max) @ Si :
1.15V @ 1.5A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
4µs
Kouran - Fèy Reverse @ Vr :
1µA @ 200V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AC, SMA
Pake Aparèy Founisè :
DO-214AC (SMA)
Operating Tanperati - Junction :
-55°C ~ 150°C
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