Microsemi Corporation - APTGT200SK120G

KEY Part #: K6533053

APTGT200SK120G Pricing (USD) [1136PC Stock]

  • 1 pcs$38.13751
  • 100 pcs$36.45967

Nimewo Pati:
APTGT200SK120G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 1200V 280A 890W SP6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Diodes - RF, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APTGT200SK120G electronic components. APTGT200SK120G can be shipped within 24 hours after order. If you have any demands for APTGT200SK120G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTGT200SK120G Atribi pwodwi yo

Nimewo Pati : APTGT200SK120G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 1200V 280A 890W SP6
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 280A
Pouvwa - Max : 890W
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 200A
Kouran - Cutoff Pèseptè (Max) : 350µA
Antre kapasite (Cies) @ Vce : 14nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SP6
Pake Aparèy Founisè : SP6