[826PC Stock]
- Nimewo Pati:
- BSM75GB170DN2HOSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 1700V 110A 625W MODULE.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSM75GB170DN2HOSA1 electronic components. BSM75GB170DN2HOSA1 can be shipped within 24 hours after order. If you have any demands for BSM75GB170DN2HOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM75GB170DN2HOSA1 Atribi pwodwi yo
Nimewo Pati :
BSM75GB170DN2HOSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 1700V 110A 625W MODULE
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
-
Nou konte genyen :
Half Bridge
Voltage - Pèseptè ki emèt deba (Max) :
1700V
Kouran - Pèseptè (Ic) (Max) :
110A
Pouvwa - Max :
625W
Vce (sou) (Max) @ Vge, Ic :
3.9V @ 15V, 75A
Kouran - Cutoff Pèseptè (Max) :
-
Antre kapasite (Cies) @ Vce :
11nF @ 25V
Antre :
Standard
NTC thermistor :
No
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
Module
Pake Aparèy Founisè :
Module
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