Nimewo Pati :
GAP3SLT33-220FP
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE SCHOTTKY 3.3KV 300MA TO220
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
3300V
Kouran - Mwayèn Rèktifye (Io) :
300mA
Voltage - Forward (Vf) (Max) @ Si :
1.7V @ 300mA
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
5µA @ 3300V
Kapasite @ Vr, F :
42pF @ 1V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-2 Full Pack
Pake Aparèy Founisè :
TO-220FP
Operating Tanperati - Junction :
-55°C ~ 175°C