IXFX120N30T Pricing (USD) [9959PC Stock]
- 1 pcs$5.80402
- 10 pcs$5.22274
- 100 pcs$4.29418
- 500 pcs$3.59781
- Nimewo Pati:
- IXFX120N30T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 300V 120A PLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXFX120N30T electronic components. IXFX120N30T can be shipped within 24 hours after order. If you have any demands for IXFX120N30T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX120N30T Atribi pwodwi yo
Nimewo Pati :
IXFX120N30T
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 300V 120A PLUS247
Seri :
GigaMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
24 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
265nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
20000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
960W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PLUS247™-3
Pake / Ka :
TO-247-3
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