[4559PC Stock]
- Nimewo Pati:
- RN1131MFV(TL3,T)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- TRANS PREBIAS NPN 0.15W VESM.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage RN1131MFV(TL3,T) electronic components. RN1131MFV(TL3,T) can be shipped within 24 hours after order. If you have any demands for RN1131MFV(TL3,T), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1131MFV(TL3,T) Atribi pwodwi yo
Nimewo Pati :
RN1131MFV(TL3,T)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
TRANS PREBIAS NPN 0.15W VESM
Seri :
-
Estati Pati :
Active
Kalite tranzistò :
NPN - Pre-Biased
Kouran - Pèseptè (Ic) (Max) :
100mA
Voltage - Pèseptè ki emèt deba (Max) :
50V
Rezistans - Sèvi (R1) :
100 kOhms
Rezistans - Sèvi ak emeteur (R2) :
-
DC Kouran Akeri (HFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Kouran - Cutoff Pèseptè (Max) :
100nA (ICBO)
Frekans - Tranzisyon :
-
Pouvwa - Max :
150mW
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-723
Pake Aparèy Founisè :
VESM
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