GPA801HC0G Pricing (USD) [366462PC Stock]
- 1 pcs$0.10093
- Nimewo Pati:
- GPA801HC0G
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- DIODE GEN PURP 50V 8A TO220AC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation GPA801HC0G electronic components. GPA801HC0G can be shipped within 24 hours after order. If you have any demands for GPA801HC0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GPA801HC0G Atribi pwodwi yo
Nimewo Pati :
GPA801HC0G
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE GEN PURP 50V 8A TO220AC
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
50V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 8A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
5µA @ 50V
Kapasite @ Vr, F :
50pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-2
Pake Aparèy Founisè :
TO-220AC
Operating Tanperati - Junction :
-55°C ~ 150°C
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