Nimewo Pati :
SUF30J-E3/54
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 600V 3A P600
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
3A
Voltage - Forward (Vf) (Max) @ Si :
2V @ 3A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
35ns
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
P600
Operating Tanperati - Junction :
-55°C ~ 150°C