DF200R12PT4B6BOSA1 Pricing (USD) [505PC Stock]
- 1 pcs$91.86184
- Nimewo Pati:
- DF200R12PT4B6BOSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT MODULE VCES 1200V 200A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Diodes - RF, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies DF200R12PT4B6BOSA1 electronic components. DF200R12PT4B6BOSA1 can be shipped within 24 hours after order. If you have any demands for DF200R12PT4B6BOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DF200R12PT4B6BOSA1 Atribi pwodwi yo
Nimewo Pati :
DF200R12PT4B6BOSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT MODULE VCES 1200V 200A
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Nou konte genyen :
Three Phase Inverter
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
300A
Pouvwa - Max :
1100W
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 200A
Kouran - Cutoff Pèseptè (Max) :
15µA
Antre kapasite (Cies) @ Vce :
12.5nF @ 25V
Antre :
Standard
NTC thermistor :
Yes
Operating Tanperati :
-40°C ~ 150°C
Mounting Kalite :
Chassis Mount
Pake / Ka :
Module
Pake Aparèy Founisè :
Module
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