EGF1DHE3_A/I Pricing (USD) [460696PC Stock]
- 1 pcs$0.08029
- Nimewo Pati:
- EGF1DHE3_A/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 200V 1A DO214BA. Rectifiers 1A,200V,50NS AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Tiristors - SCR, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Diodes - RF and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division EGF1DHE3_A/I electronic components. EGF1DHE3_A/I can be shipped within 24 hours after order. If you have any demands for EGF1DHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGF1DHE3_A/I Atribi pwodwi yo
Nimewo Pati :
EGF1DHE3_A/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 200V 1A DO214BA
Seri :
Automotive, AEC-Q101, Superectifier®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
2µA @ 200V
Kapasite @ Vr, F :
15pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214BA
Pake Aparèy Founisè :
DO-214BA (GF1)
Operating Tanperati - Junction :
-65°C ~ 175°C
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