[2707PC Stock]
- Nimewo Pati:
- RN1109MFV,L3F
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- TRANS PREBIAS NPN 50V 500NA VESM.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage RN1109MFV,L3F electronic components. RN1109MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1109MFV,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1109MFV,L3F Atribi pwodwi yo
Nimewo Pati :
RN1109MFV,L3F
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
TRANS PREBIAS NPN 50V 500NA VESM
Seri :
-
Estati Pati :
Active
Kalite tranzistò :
NPN - Pre-Biased
Kouran - Pèseptè (Ic) (Max) :
100mA
Voltage - Pèseptè ki emèt deba (Max) :
50V
Rezistans - Sèvi (R1) :
47 kOhms
Rezistans - Sèvi ak emeteur (R2) :
22 kOhms
DC Kouran Akeri (HFE) (Min) @ Ic, Vce :
70 @ 10mA, 5V
Vce saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Kouran - Cutoff Pèseptè (Max) :
500nA
Frekans - Tranzisyon :
-
Pouvwa - Max :
150mW
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-723
Pake Aparèy Founisè :
VESM
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