Vishay Semiconductor Diodes Division - GPP60DHE3/73

KEY Part #: K6448039

GPP60DHE3/73 Pricing (USD) [1219PC Stock]

  • 1,200 pcs$0.22425

Nimewo Pati:
GPP60DHE3/73
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 6A P600.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division GPP60DHE3/73 electronic components. GPP60DHE3/73 can be shipped within 24 hours after order. If you have any demands for GPP60DHE3/73, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GPP60DHE3/73 Atribi pwodwi yo

Nimewo Pati : GPP60DHE3/73
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 6A P600
Seri : -
Estati Pati : Obsolete
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 6A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 6A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 5.5µs
Kouran - Fèy Reverse @ Vr : 5µA @ 200V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : P600, Axial
Pake Aparèy Founisè : P600
Operating Tanperati - Junction : -55°C ~ 175°C

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