[5810PC Stock]
- Nimewo Pati:
- MBR30H100CT-M3/4W
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE ARRAY SCHOTTKY 100V TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Modil pouvwa chofè, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division MBR30H100CT-M3/4W electronic components. MBR30H100CT-M3/4W can be shipped within 24 hours after order. If you have any demands for MBR30H100CT-M3/4W, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MBR30H100CT-M3/4W Atribi pwodwi yo
Nimewo Pati :
MBR30H100CT-M3/4W
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE ARRAY SCHOTTKY 100V TO220
Seri :
-
Estati Pati :
Obsolete
Konfigirasyon dyòd :
1 Pair Common Cathode
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) :
15A
Voltage - Forward (Vf) (Max) @ Si :
930mV @ 30A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
5µA @ 100V
Operating Tanperati - Junction :
-65°C ~ 175°C
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-3
Pake Aparèy Founisè :
TO-220AB
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