Vishay Semiconductor Diodes Division - BAS16D-HE3-08

KEY Part #: K6455068

BAS16D-HE3-08 Pricing (USD) [1848249PC Stock]

  • 1 pcs$0.02001
  • 15,000 pcs$0.01412

Nimewo Pati:
BAS16D-HE3-08
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 75V 250MA SOD123. Diodes - General Purpose, Power, Switching 75 Volt 0.25 Amp 2.0A IFSM @ 1uS
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Transistors - JFETs, Tiristors - SCR - Modil yo and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BAS16D-HE3-08 electronic components. BAS16D-HE3-08 can be shipped within 24 hours after order. If you have any demands for BAS16D-HE3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS16D-HE3-08 Atribi pwodwi yo

Nimewo Pati : BAS16D-HE3-08
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 75V 250MA SOD123
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 75V
Kouran - Mwayèn Rèktifye (Io) : 250mA
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 150mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 6ns
Kouran - Fèy Reverse @ Vr : 1µA @ 75V
Kapasite @ Vr, F : 2pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SOD-123
Pake Aparèy Founisè : SOD-123
Operating Tanperati - Junction : -55°C ~ 150°C

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