Microsemi Corporation - JAN1N4967DUS

KEY Part #: K6479751

JAN1N4967DUS Pricing (USD) [3277PC Stock]

  • 1 pcs$13.21651
  • 100 pcs$11.87693

Nimewo Pati:
JAN1N4967DUS
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
DIODE ZENER 24V 5W D5B. Zener Diodes Zener Diodes
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Microsemi Corporation JAN1N4967DUS electronic components. JAN1N4967DUS can be shipped within 24 hours after order. If you have any demands for JAN1N4967DUS, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N4967DUS Atribi pwodwi yo

Nimewo Pati : JAN1N4967DUS
Manifakti : Microsemi Corporation
Deskripsyon : DIODE ZENER 24V 5W D5B
Seri : Military, MIL-PRF-19500/356
Estati Pati : Active
Voltage - Zener (Nom) (Vz) : 24V
Tolerans : ±1%
Pouvwa - Max : 5W
Enpedans (Max) (Zzt) : 5 Ohms
Kouran - Fèy Reverse @ Vr : 2µA @ 18.2V
Voltage - Forward (Vf) (Max) @ Si : 1.5V @ 1A
Operating Tanperati : -65°C ~ 175°C
Mounting Kalite : Surface Mount
Pake / Ka : E-MELF
Pake Aparèy Founisè : D-5B

Ou ka enterese tou
  • MMBD1705A

    ON Semiconductor

    DIODE ARRAY GP 30V 50MA SOT23-3.

  • SMBD7000E6327HTSA1

    Infineon Technologies

    DIODE ARRAY GP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching AF DIODE 100V 0.2A

  • 1SS181,LF

    Toshiba Semiconductor and Storage

    DIODE ARRAY GP 80V 100MA SC59. Diodes - General Purpose, Power, Switching Hi Spd Switch Diode 0.1A 80V VR

  • BAV170E6433HTMA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode Array

  • BAV70E6433HTMA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode 200mA

  • BAV70WH6327XTSA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT323. Diodes - General Purpose, Power, Switching AF DIGITAL TRANSISTOR