HGTG7N60A4D Pricing (USD) [44756PC Stock]
- 1 pcs$0.87362
- 450 pcs$0.84816
- Nimewo Pati:
- HGTG7N60A4D
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 600V 34A 125W TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor HGTG7N60A4D electronic components. HGTG7N60A4D can be shipped within 24 hours after order. If you have any demands for HGTG7N60A4D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTG7N60A4D Atribi pwodwi yo
Nimewo Pati :
HGTG7N60A4D
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 600V 34A 125W TO247
Seri :
-
Estati Pati :
Not For New Designs
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
34A
Kouran - Pèseptè batman (Icm) :
56A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 7A
Pouvwa - Max :
125W
Oblije chanje enèji :
55µJ (on), 60µJ (off)
Kalite Antre :
Standard
Gate chaje :
37nC
Td (on / off) @ 25 ° C :
11ns/100ns
Kondisyon egzamen an :
390V, 7A, 25 Ohm, 15V
Ranvèse Tan Reverse (trr) :
34ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247-3
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