Infineon Technologies - FD1200R17KE3KB2NOSA1

KEY Part #: K6533297

[880PC Stock]


    Nimewo Pati:
    FD1200R17KE3KB2NOSA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    IGBT MODULE 1700V 1200A.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal and Modil pouvwa chofè ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies FD1200R17KE3KB2NOSA1 electronic components. FD1200R17KE3KB2NOSA1 can be shipped within 24 hours after order. If you have any demands for FD1200R17KE3KB2NOSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FD1200R17KE3KB2NOSA1 Atribi pwodwi yo

    Nimewo Pati : FD1200R17KE3KB2NOSA1
    Manifakti : Infineon Technologies
    Deskripsyon : IGBT MODULE 1700V 1200A
    Seri : *
    Estati Pati : Obsolete
    Kalite IGBT : -
    Nou konte genyen : -
    Voltage - Pèseptè ki emèt deba (Max) : -
    Kouran - Pèseptè (Ic) (Max) : -
    Pouvwa - Max : -
    Vce (sou) (Max) @ Vge, Ic : -
    Kouran - Cutoff Pèseptè (Max) : -
    Antre kapasite (Cies) @ Vce : -
    Antre : -
    NTC thermistor : -
    Operating Tanperati : -
    Mounting Kalite : -
    Pake / Ka : -
    Pake Aparèy Founisè : -

    Ou ka enterese tou
    • VS-ETL015Y120H

      Vishay Semiconductor Diodes Division

      IGBT 1200V 22A 89W EMIPAK-2B. Rectifiers 15A Dbl Interleaved Boost Converter

    • VS-ETF150Y65U

      Vishay Semiconductor Diodes Division

      IGBT 650V 150A EMIPAK-2B.

    • VS-ETF075Y60U

      Vishay Semiconductor Diodes Division

      IGBT 600V 109A 294W EMIPAK-2B.

    • CPV364M4U

      Vishay Semiconductor Diodes Division

      IGBT SIP MODULE 600V 10A IMS-2.

    • APT85GR120JD60

      Microsemi Corporation

      IGBT MODULE 1200V 116A ISOTOP.

    • APTGT100DU60TG

      Microsemi Corporation

      POWER MOD IGBT TRENCH DL SRC SP4.