Nimewo Pati :
BAS16WE6327HTSA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE GEN PURP 80V 250MA SOT323
Voltage - DC Ranvèse (Vr) (Max) :
80V
Kouran - Mwayèn Rèktifye (Io) :
250mA (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.25V @ 150mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
4ns
Kouran - Fèy Reverse @ Vr :
1µA @ 75V
Kapasite @ Vr, F :
2pF @ 0V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
SC-70, SOT-323
Pake Aparèy Founisè :
PG-SOT323-3
Operating Tanperati - Junction :
150°C (Max)