Vishay Semiconductor Diodes Division - BZT52B9V1-HE3-18

KEY Part #: K6500058

BZT52B9V1-HE3-18 Pricing (USD) [2164846PC Stock]

  • 1 pcs$0.01709
  • 10,000 pcs$0.01627

Nimewo Pati:
BZT52B9V1-HE3-18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE ZENER 9.1V 410MW SOD123. Zener Diodes 9.1 Volt 0.5W 2% AUTO
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Diodes - RF and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BZT52B9V1-HE3-18 electronic components. BZT52B9V1-HE3-18 can be shipped within 24 hours after order. If you have any demands for BZT52B9V1-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BZT52B9V1-HE3-18 Atribi pwodwi yo

Nimewo Pati : BZT52B9V1-HE3-18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE ZENER 9.1V 410MW SOD123
Seri : Automotive, AEC-Q101
Estati Pati : Active
Voltage - Zener (Nom) (Vz) : 9.1V
Tolerans : ±2%
Pouvwa - Max : 410mW
Enpedans (Max) (Zzt) : 4.8 Ohms
Kouran - Fèy Reverse @ Vr : 100nA @ 7V
Voltage - Forward (Vf) (Max) @ Si : -
Operating Tanperati : -55°C ~ 150°C
Mounting Kalite : Surface Mount
Pake / Ka : SOD-123
Pake Aparèy Founisè : SOD-123

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