Nimewo Pati :
DBD10G-TM-E
Manifakti :
ON Semiconductor
Deskripsyon :
BRIDGE RECT 1PHASE 600V 1A
Kalite dyòd :
Single Phase
Voltage - Peak Ranvèse (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.05V @ 500mA
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
4-SMD, Gull Wing