Vishay Semiconductor Diodes Division - 1N4937GPEHE3/91

KEY Part #: K6443828

[2658PC Stock]


    Nimewo Pati:
    1N4937GPEHE3/91
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE GEN PURP 600V 1A DO204AL.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays and Tiristors - SCR ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division 1N4937GPEHE3/91 electronic components. 1N4937GPEHE3/91 can be shipped within 24 hours after order. If you have any demands for 1N4937GPEHE3/91, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    1N4937GPEHE3/91 Atribi pwodwi yo

    Nimewo Pati : 1N4937GPEHE3/91
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE GEN PURP 600V 1A DO204AL
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 600V
    Kouran - Mwayèn Rèktifye (Io) : 1A
    Voltage - Forward (Vf) (Max) @ Si : 1.2V @ 1A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 200ns
    Kouran - Fèy Reverse @ Vr : 5µA @ 600V
    Kapasite @ Vr, F : 12pF @ 4V, 1MHz
    Mounting Kalite : Through Hole
    Pake / Ka : DO-204AL, DO-41, Axial
    Pake Aparèy Founisè : DO-204AL (DO-41)
    Operating Tanperati - Junction : -50°C ~ 150°C

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