Vishay Semiconductor Diodes Division - P600G-E3/73

KEY Part #: K6448217

P600G-E3/73 Pricing (USD) [203307PC Stock]

  • 1 pcs$0.18193
  • 2,700 pcs$0.10736

Nimewo Pati:
P600G-E3/73
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 400V 6A P600. Rectifiers 6.0 Amp 400 Volt 400 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division P600G-E3/73 electronic components. P600G-E3/73 can be shipped within 24 hours after order. If you have any demands for P600G-E3/73, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

P600G-E3/73 Atribi pwodwi yo

Nimewo Pati : P600G-E3/73
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 400V 6A P600
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 6A
Voltage - Forward (Vf) (Max) @ Si : 900mV @ 6A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2.5µs
Kouran - Fèy Reverse @ Vr : 5µA @ 400V
Kapasite @ Vr, F : 150pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : P600, Axial
Pake Aparèy Founisè : P600
Operating Tanperati - Junction : -50°C ~ 150°C

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