Diodes Incorporated - DMN2400UFD-7

KEY Part #: K6416883

DMN2400UFD-7 Pricing (USD) [1007122PC Stock]

  • 1 pcs$0.03691
  • 3,000 pcs$0.03673

Nimewo Pati:
DMN2400UFD-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 20V 0.9A DFN1212-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN2400UFD-7 electronic components. DMN2400UFD-7 can be shipped within 24 hours after order. If you have any demands for DMN2400UFD-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2400UFD-7 Atribi pwodwi yo

Nimewo Pati : DMN2400UFD-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 20V 0.9A DFN1212-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 900mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 600 mOhm @ 200mA, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 500nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 37pF @ 16V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 400mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : X1-DFN1212-3
Pake / Ka : 3-UDFN