Vishay Semiconductor Diodes Division - FEPE16DT-E3/45

KEY Part #: K6476302

FEPE16DT-E3/45 Pricing (USD) [5809PC Stock]

  • 2,000 pcs$0.22093

Nimewo Pati:
FEPE16DT-E3/45
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE ARRAY GP 200V 16A TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division FEPE16DT-E3/45 electronic components. FEPE16DT-E3/45 can be shipped within 24 hours after order. If you have any demands for FEPE16DT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FEPE16DT-E3/45 Atribi pwodwi yo

Nimewo Pati : FEPE16DT-E3/45
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE ARRAY GP 200V 16A TO220AB
Seri : -
Estati Pati : Obsolete
Konfigirasyon dyòd : 1 Pair Common Cathode
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 16A
Voltage - Forward (Vf) (Max) @ Si : 950mV @ 8A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 35ns
Kouran - Fèy Reverse @ Vr : 10µA @ 200V
Operating Tanperati - Junction : -55°C ~ 150°C
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB

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