Nimewo Pati :
SI9910DY-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
IC MOSFET DVR ADAPTIVE PWR 8SOIC
Kondwi konte genyen :
High-Side
Kalite Gate :
N-Channel MOSFET
Voltage - Pwovizyon pou :
10.8V ~ 16.5V
Vòltaj lojik - VIL, VIH :
-
Kouran - Peak Sòti (Sous, Lavabo) :
1A, 1A
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
500V
Rise / Fall Time (Tip) :
50ns, 35ns
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC