Vishay Semiconductor Diodes Division - SS2FN6HM3/H

KEY Part #: K6433508

SS2FN6HM3/H Pricing (USD) [1137175PC Stock]

  • 1 pcs$0.03253

Nimewo Pati:
SS2FN6HM3/H
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 60V 2A DO219AB. Schottky Diodes & Rectifiers 60V Vrrm 2A IF(AV) AEC-Q101 Qualified
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division SS2FN6HM3/H electronic components. SS2FN6HM3/H can be shipped within 24 hours after order. If you have any demands for SS2FN6HM3/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SS2FN6HM3/H Atribi pwodwi yo

Nimewo Pati : SS2FN6HM3/H
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 60V 2A DO219AB
Seri : Automotive, AEC-Q101, eSMP®
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 60V
Kouran - Mwayèn Rèktifye (Io) : 2A
Voltage - Forward (Vf) (Max) @ Si : 600mV @ 2A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 900µA @ 60V
Kapasite @ Vr, F : 100pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-219AB
Pake Aparèy Founisè : DO-219AB (SMF)
Operating Tanperati - Junction : -55°C ~ 150°C

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