SBAS21LT1G Pricing (USD) [1345631PC Stock]
- 1 pcs$0.02851
- 3,000 pcs$0.02837
- 6,000 pcs$0.02467
- 15,000 pcs$0.02097
- 30,000 pcs$0.01974
- 75,000 pcs$0.01850
- Nimewo Pati:
- SBAS21LT1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- DIODE GEN PURP 250V 200MA SOT23. Diodes - General Purpose, Power, Switching SS SWCH DIO SPCL
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - JFETs and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor SBAS21LT1G electronic components. SBAS21LT1G can be shipped within 24 hours after order. If you have any demands for SBAS21LT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SBAS21LT1G Atribi pwodwi yo
Nimewo Pati :
SBAS21LT1G
Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 250V 200MA SOT23
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
250V
Kouran - Mwayèn Rèktifye (Io) :
200mA (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.25V @ 200mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
100nA @ 200V
Kapasite @ Vr, F :
5pF @ 0V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè :
SOT-23
Operating Tanperati - Junction :
-55°C ~ 150°C
Dènye nouvèl
Ou ka enterese tou
-
-
SL03-GS08
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 30V 1.1A DO219AB. Schottky Diodes & Rectifiers 1.1A .395V
-
FESB8DTHE3/81
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 8A TO263AB. Rectifiers 200 Volt 8.0A 35ns Single
-
BYWB29-100HE3/81
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 8A TO263AB. Rectifiers 100 Volt 8.0A 25ns Single Glass Pass
-
BYWB29-200HE3/81
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 8A TO263AB. Rectifiers 200 Volt 8.0A 25ns Single Glass Pass
-
BYWB29-50HE3/81
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 8A TO263AB. Rectifiers 50 Volt 8.0A 25ns Single Glass Pass
Pati cho
- MBR1645-10HE3/45
- D251K12BXPSA1
- JTXM19500/469-05
- UF1503S-B
- SB05-05C-M-TB-E
- LS412060
- FR204TA
- JANTX1N6661US
- RGP10K-M3/73
- GP10G-4004E-M3/73
- RU 3AM
- RF 1A
- SD24145
- JANTXV1N5802
- MBRB1050HE3/45
- HER604-TP
- SS1H10HE3/61T
- S5MHE3/57T
- ESH2PD-E3/84A
- SS8PH9HM3/87A
- SS2P3-E3/85A
- SS1H10HE3/5AT
- SS19-E3/5AT
- GP30KHE3/54
- GP20B-E3/54
- EGP20DHE3/73
- STPS1545R
- STTH3002G
- LSM345JE3
- ES2A-TP
- VS-HFA16TB120PBF
- VS-1N5819
- 241NQ045R
- 1N6630
- RL103-AP
- ER303-AP
- RO 2CV1
- RU 3AV1
- S10MC M6G
- ES3A M6G