NXP USA Inc. - PBRN123EK,115

KEY Part #: K6527742

[2730PC Stock]


    Nimewo Pati:
    PBRN123EK,115
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    TRANS PREBIAS NPN 250MW SMT3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. PBRN123EK,115 electronic components. PBRN123EK,115 can be shipped within 24 hours after order. If you have any demands for PBRN123EK,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PBRN123EK,115 Atribi pwodwi yo

    Nimewo Pati : PBRN123EK,115
    Manifakti : NXP USA Inc.
    Deskripsyon : TRANS PREBIAS NPN 250MW SMT3
    Seri : -
    Estati Pati : Obsolete
    Kalite tranzistò : NPN - Pre-Biased
    Kouran - Pèseptè (Ic) (Max) : 600mA
    Voltage - Pèseptè ki emèt deba (Max) : 40V
    Rezistans - Sèvi (R1) : 2.2 kOhms
    Rezistans - Sèvi ak emeteur (R2) : 2.2 kOhms
    DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 280 @ 300mA, 5V
    Vce saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
    Kouran - Cutoff Pèseptè (Max) : 500nA
    Frekans - Tranzisyon : -
    Pouvwa - Max : 250mW
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-236-3, SC-59, SOT-23-3
    Pake Aparèy Founisè : SMT3; MPAK