[234PC Stock]
- Nimewo Pati:
- SM8S33AHE3/2E
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- TVS DIODE 33V 53.3V DO218AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Anvwaye Limitè Kouran (ICL), Pwodwi pou Telefòn, Elektrik, Fusion spesyalite, TVS - Varistors, MOVs, Koupe tèmik (Fizyon tèmik), Awondisman Awondisman yo, Gaz Dechè Sispansyon aresters (GDT) and Sik Sipresyon IC ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division SM8S33AHE3/2E electronic components. SM8S33AHE3/2E can be shipped within 24 hours after order. If you have any demands for SM8S33AHE3/2E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SM8S33AHE3/2E Atribi pwodwi yo
Nimewo Pati :
SM8S33AHE3/2E
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
TVS DIODE 33V 53.3V DO218AB
Seri :
Automotive, AEC-Q101, PAR®
Estati Pati :
Obsolete
Kalite :
Zener
Chanèl Unidirèksyonèl :
1
Chanèl bidirèksyonèl yo :
-
Voltage - Ranvèse kanpe (Tip) :
33V
Vòltaj - Dekonpozisyon (Min) :
36.7V
Voltage - blocage (Max) @ Ipp :
53.3V
Kouran - Pik batman (10 / 1000µs) :
124A
Pouvwa - Peak batman kè :
6600W (6.6kW)
Pwoteksyon Liy Pouvwa :
No
Aplikasyon :
Automotive
Kapasite @ frekans :
-
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-218AB
Pake Aparèy Founisè :
DO-218AB
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