Vishay Semiconductor Diodes Division - MBRB1035HE3/45

KEY Part #: K6445737

[7300PC Stock]


    Nimewo Pati:
    MBRB1035HE3/45
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE SCHOTTKY 35V 10A TO263AB.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - RF, Modil pouvwa chofè, Diodes - Bridge rèktifikateur and Tiristors - SCR ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division MBRB1035HE3/45 electronic components. MBRB1035HE3/45 can be shipped within 24 hours after order. If you have any demands for MBRB1035HE3/45, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    MBRB1035HE3/45 Atribi pwodwi yo

    Nimewo Pati : MBRB1035HE3/45
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE SCHOTTKY 35V 10A TO263AB
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : Schottky
    Voltage - DC Ranvèse (Vr) (Max) : 35V
    Kouran - Mwayèn Rèktifye (Io) : 10A
    Voltage - Forward (Vf) (Max) @ Si : 840mV @ 20A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : -
    Kouran - Fèy Reverse @ Vr : 100µA @ 35V
    Kapasite @ Vr, F : -
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Pake Aparèy Founisè : TO-263AB
    Operating Tanperati - Junction : -65°C ~ 150°C

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