IXYS - IXFA20N50P3

KEY Part #: K6394792

IXFA20N50P3 Pricing (USD) [34636PC Stock]

  • 1 pcs$1.19850
  • 200 pcs$1.19253

Nimewo Pati:
IXFA20N50P3
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 20A TO-263AA.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in IXYS IXFA20N50P3 electronic components. IXFA20N50P3 can be shipped within 24 hours after order. If you have any demands for IXFA20N50P3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFA20N50P3 Atribi pwodwi yo

Nimewo Pati : IXFA20N50P3
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 20A TO-263AA
Seri : HiPerFET™, Polar3™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 300 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 5V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs : 36nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1800pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 380W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263 (IXFA)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB