Nimewo Pati :
JDH2S01FSTPL3
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
RF DIODE SCHOTTKY 4V FSC
Kalite dyòd :
Schottky - Single
Voltage - Peak Ranvèse (Max) :
4V
Kapasite @ Vr, F :
0.6pF @ 0.2V, 1MHz
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
125°C (TJ)
Pake / Ka :
2-SMD, Flat Lead
Pake Aparèy Founisè :
fSC