Vishay Semiconductor Diodes Division - GL34GHE3/98

KEY Part #: K6457665

GL34GHE3/98 Pricing (USD) [610930PC Stock]

  • 1 pcs$0.06054
  • 5,000 pcs$0.05536

Nimewo Pati:
GL34GHE3/98
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 400V 500MA DO213. Rectifiers 400 Volt 0.5 Amp 10 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division GL34GHE3/98 electronic components. GL34GHE3/98 can be shipped within 24 hours after order. If you have any demands for GL34GHE3/98, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GL34GHE3/98 Atribi pwodwi yo

Nimewo Pati : GL34GHE3/98
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 400V 500MA DO213
Seri : SUPERECTIFIER®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 500mA
Voltage - Forward (Vf) (Max) @ Si : 1.2V @ 500mA
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 1.5µs
Kouran - Fèy Reverse @ Vr : 5µA @ 400V
Kapasite @ Vr, F : 4pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-213AA (Glass)
Pake Aparèy Founisè : DO-213AA (GL34)
Operating Tanperati - Junction : -65°C ~ 175°C

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