GeneSiC Semiconductor - MURTA600120

KEY Part #: K6468639

MURTA600120 Pricing (USD) [671PC Stock]

  • 1 pcs$69.19588
  • 18 pcs$38.91334

Nimewo Pati:
MURTA600120
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
DIODE GEN 1.2KV 300A 3 TOWER. Rectifiers 1200V 600A Si Super Fast Recovery
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor MURTA600120 electronic components. MURTA600120 can be shipped within 24 hours after order. If you have any demands for MURTA600120, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MURTA600120 Atribi pwodwi yo

Nimewo Pati : MURTA600120
Manifakti : GeneSiC Semiconductor
Deskripsyon : DIODE GEN 1.2KV 300A 3 TOWER
Seri : -
Estati Pati : Active
Konfigirasyon dyòd : 1 Pair Common Cathode
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1200V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 300A
Voltage - Forward (Vf) (Max) @ Si : 2.6V @ 300A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 25µA @ 1200V
Operating Tanperati - Junction : -55°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Three Tower
Pake Aparèy Founisè : Three Tower
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