Nimewo Pati :
RN1116MFV,L3F
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
X34 PB-F VESM TRANSISTOR PD 150M
Kalite tranzistò :
NPN - Pre-Biased
Kouran - Pèseptè (Ic) (Max) :
100mA
Voltage - Pèseptè ki emèt deba (Max) :
50V
Rezistans - Sèvi (R1) :
4.7 kOhms
Rezistans - Sèvi ak emeteur (R2) :
10 kOhms
DC Kouran Akeri (HFE) (Min) @ Ic, Vce :
50 @ 10mA, 5V
Vce saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Kouran - Cutoff Pèseptè (Max) :
500nA
Frekans - Tranzisyon :
250MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
VESM